Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors
نویسندگان
چکیده
منابع مشابه
Self-Heating Effects In Polysilicon Source Gated Transistors
Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may...
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The performance benefits of using source-gated transistors (SGTs) in analog large-area electronic circuits are examined practically and via numerical simulations. In current mirror circuits made using thin-film technology, significant advantages are observed for SGT implementations. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the...
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...................................................................................................................ii Declaration .............................................................................................................iii Acknowledgments ................................................................................................... iv List of publications .................
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2015
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2015.2412452